Title :
Manipulation of the Ti/Si reaction paths by introducing an amorphous Ge interlayer
Author :
Ma, Z. ; Allen, L.H.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
Evolution of the Ti/a-Ge/Si trilayer reactions has been investigated using transmission electron microscopy and four-point sheet resistance measurement. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, a crystalline Ti6Ge 5 is the first phase observed during the reaction preceding the equilibrium C54-Ti(Si,Ge)2, a substitutional solid solution type C49-Ti(Si,Ge)2 forms upon annealing at 550~600°C, regardless of the replacement of amorphous phase by the crystalline phase. The C49-to-C54 polymorphic transformation occurs at ~650°C. The reaction path is also correlated with the change in film resistance obtained from a-four-point sheet resistance measurement
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; germanium; integrated circuit metallisation; polymorphic transformations; semiconductor-metal boundaries; silicon; titanium; transmission electron microscopy; 550 to 600 degC; 650 degC; C49-C54 polymorphic transformation; Ti-Ge-Si; Ti6Ge5; annealing; crystalline Ti6Ge5 phase; four-point sheet resistance; semiconductor; substitutional solid solution; transmission electron microscopy; trilayer reactions; Amorphous materials; Annealing; Crystallization; Electrical resistance measurement; Electrons; Materials science and technology; Optical films; Silicides; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499263
