Charging effects on SOI based NEMS by the example of a nanoscale Thermal-Time-of-Flight (TToF) sensor

Author

Ebschke, S. ; Wieker, M. ; Gerwinn, J. ; Loechte, A. ; Kallis, K.T. ; Fiedler, H.L.

fYear

2014

fDate

18-21 Aug. 2014

Firstpage

785

Lastpage

788

Abstract

By the use of novel techniques like Silicon-on-insulator (SOI) wafer and electron beam lithography (EBL), the development of new types of NEMS-sensors, like a nanoscale Thermal-Time-of-Flight (TToF) sensor, are possible. While scaling the dimensions to a nanoscale level, new side effects will become non neglectable. Within the research and development of a nanoscale TToF sensor such a side effect has been discovered. It shows that the charging of the buried oxide, while applying a voltage to the nano diodes, has an important impact on the characteristics of this kind of sensor. The significance of this effect and its impact on this type of sensor and similar sensors will be shown within this paper.

Keywords

electron beam lithography; elemental semiconductors; nanosensors; silicon-on-insulator; EBL; NEMS-sensors; SOI wafer; Si; TToF sensor; buried oxide charging; charging effects; electron beam lithography; nanodiodes; nanoscale thermal-time-of-flight sensor; silicon-on-insulator wafer; Heating; Nanoscale devices; Silicon; Silicon compounds; Silicon-on-insulator; Substrates; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on

Conference_Location

Toronto, ON

Type

conf

DOI

10.1109/NANO.2014.6968033

Filename

6968033