Title :
Study on solid state reaction of TiN/Co/Ti multi-layer with amorphous silicon
Author :
Fang, Hua ; Li, Bing-Zong ; Yu, Wei-Feng ; Huang, Wei-Ning ; Shao, Kai ; Wu, Wei-Jun ; Gu, Zhi-Guang ; Jiang, Guo-Bao
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi2 with good thermal stability and smooth surface can be obtained after thermal annealing
Keywords :
Auger effect; X-ray diffraction; annealing; cobalt; cobalt compounds; metallisation; scanning electron microscopy; thermal stability; titanium; titanium compounds; CoSi2; PECVD amorphous Si; Si; TiN-Co-Ti; TiN/Co/Ti multi-layer; smooth surface; solid state reaction; thermal annealing; thermal stability; uniform polycrystalline CoSi2; Amorphous silicon; Annealing; Plasma temperature; Silicides; Solid state circuits; Surface resistance; Thermal loading; Thermal resistance; Thermal stability; Tin;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499266
