Title :
High efficiency InGaP/GaAs solar cell with Sub-wavelength structure on AlInP window layer
Author :
Tsai, Min-An ; Yu, Peichen ; Chiu, C.H. ; Kuo, H.C. ; Lu, T.C.
Author_Institution :
Dept. of Electrophys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this study, InGaP/GaAs solar cells fabricated by a sub-wavelength surface texture process are presented. The characteristics of the InGaP/GaAs solar cells with and without the sub-wavelength surface texture are studied. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 10.8%. The simulated result of the sub-wavelength structure by the RCWA was demonstrated that absorption of the solar cell will increase by the sub-wavelength surface texture.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; solar cells; surface texture; AlInP; InGaP-GaAs; RCWA; global illumination; solar cell; sub-wavelength surface texture; temperature 293 K to 298 K; window layer; Epitaxial growth; Fabrication; Gallium arsenide; Lighting; Photovoltaic cells; Rough surfaces; Substrates; Surface roughness; Surface texture; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424479
