Title :
Origin of light emission from silicon nanoparticles
Author :
Zhan, Dahua ; Milewski, P.D. ; Lichtenwalner, D.J. ; Kolbas, R.M. ; Kingon, A.L. ; Zavada, J.M.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Abstract :
Light emission characteristics from silicon nanoparticles consisting of a crystalline core encased in an amorphous oxide shell are reported. The particles were thermally oxidized to further reduce the silicon core dimensions. Photoluminescence measurements reveal substantial difference in emission intensities and peak wavelengths under low and high excitation levels. The results indicate that at least two mechanisms contribute to the light emission from Si nanoparticles, one associated with quantum size effects, and another possibly related to surface defects
Keywords :
elemental semiconductors; oxidation; photoluminescence; silicon; surface states; 6 nm; Si nanoparticles; Si-SiO2; amorphous oxide shell; crystalline core; emission intensities; high excitation levels; light emission characteristics; low excitation levels; peak wavelengths; photoluminescence measurements; quantum size effects; surface defects; thermally oxidized particles; Amorphous materials; Argon; Crystallization; Microelectronics; Nanoparticles; Photoluminescence; Plasma temperature; Silicon; Size measurement; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499269
