Title :
High sensitivity porous silicon photodetector
Author :
Lee, Ming-Kwei ; Tseng, Yu-Chu ; Chu, Chi-Hsing
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this work, a high sensitivity porous silicon photodetector through rapid thermal oxidation has been studied. The photoresponse is 0.85 mA/mW at reverse-biased 10 V under tungsten lamp illumination with power 21.5 mW
Keywords :
avalanche breakdown; elemental semiconductors; oxidation; photodetectors; porous materials; rapid thermal processing; sensitivity; silicon; 10 V; 21.5 mW; Si; avalanche effect; high sensitivity photodetector; photoresponse; porous Si photodetector; rapid thermal oxidation; reverse-biased operation; tungsten lamp illumination; Dark current; Electric breakdown; Lamps; Lighting; Oxidation; Photodetectors; Power engineering and energy; Silicon; Tungsten; Wire;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499270
