DocumentCode
165595
Title
On ultra-low power hybrid NEMS-CMOS
Author
Beiu, V. ; Ibrahim, W. ; Tache, M. ; Liu, T.-J.K.
Author_Institution
Coll. of Inf. Technol., United Arab Emirates Univ., Al Ain, United Arab Emirates
fYear
2014
fDate
18-21 Aug. 2014
Firstpage
201
Lastpage
206
Abstract
In this paper we advocate the use of nano-electromechanical switches (NEMS) to eliminate static power consumption, and propose a dual-voltage hybrid NEMS-CMOS scheme to also reduce dynamic power consumption. The main idea is to use a smaller voltage to propagate information, and a larger voltage to drive the NEMS. CMOS amplifiers can be used to interface these two voltages. It follows that synthesizing gates with a large(r) number of inputs is beneficial, which matches very well the optimal NEMS circuit topology. Simulation results based on a particular 4-input Boolean function, show that significant power reductions can be expected when using such a hybrid design approach.
Keywords
Boolean functions; CMOS integrated circuits; nanoelectromechanical devices; network topology; power amplifiers; power consumption; 4-input Boolean function; dual-voltage hybrid NEMS-CMOS scheme; dynamic power consumption reduction; hybrid design approach; information propagation; nanoelectromechanical switches; optimal NEMS circuit topology; static power consumption elimination; synthesizing gates; ultralow power hybrid NEMS-CMOS amplifier; Boolean functions; CMOS integrated circuits; Logic gates; Nanoelectromechanical systems; Relays; Transistors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location
Toronto, ON
Type
conf
DOI
10.1109/NANO.2014.6968045
Filename
6968045
Link To Document