Title :
X-ray diffraction study of hydrogen complexes in hydrogenated nanocrystalline silicon
Author :
Yun, Feng ; Wana, Y. ; Liao, X.B.
Author_Institution :
Xi´´an Inst. of Opt. & Precision Mech., Acad. Sinica, China
Abstract :
This paper presents X-ray diffraction results on hydrogenated nanocrystalline silicon films showing a new diffraction feature at 2θ=33.6°, which is supposed to be an identifying signature of the atomic relaxation of hydrogenated Si(111) surface of nano-crystallites
Keywords :
X-ray diffraction; elemental semiconductors; hydrogen; nanostructured materials; plasma CVD coatings; semiconductor thin films; silicon; Si(111); Si:H; X-ray diffraction; atomic relaxation; hydrogen complexes; hydrogenated nanocrystalline silicon; semiconductor; thin films; Amorphous materials; Crystallization; Hydrogen; Optical diffraction; Optical films; Plasma temperature; Silicon; Substrates; X-ray diffraction; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499271
