Title :
Photovoltaic actions in MPS structure [Al(Au)/Si/p-Si]
Author :
Wang, Yan ; Yun, Feng ; Liao, Xianbo ; Kong, Guanglin
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
This communication gives the recent results about photovoltaic actions in a metal/porous silicon/p-type silicon (MPS) structure. The spectral response range is very wide from 350 nm to 1100 nm. The open circuit voltage increases linearly with decreasing of temperature, but has no longer a linear relationship with logarithm of the illuminated power density. These results can be explained on the basis of assuming that the metal/porous silicon (M/PS) Schottky junction plays a main role in the photovoltaic effects, while the PS/p-Si heterojunction impedes the carrier transport
Keywords :
Schottky barriers; Schottky diodes; elemental semiconductors; gold; photodiodes; photovoltaic effects; porous materials; semiconductor-metal boundaries; silicon; 350 to 1100 nm; Al-Si-Si; Au-Si-Si; MPS structure; Schottky junction; carrier transport; illuminated power density; open circuit voltage; photovoltaic actions; spectral response range; Artificial intelligence; Gold; Heterojunctions; Photovoltaic effects; Photovoltaic systems; Schottky diodes; Semiconductor diodes; Silicon; Solar power generation; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499272
