Photovoltaic actions in MPS structure [Al(Au)/Si/p-Si]

Author

Wang, Yan ; Yun, Feng ; Liao, Xianbo ; Kong, Guanglin

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1995

Firstpage

63

Lastpage

65

Abstract

This communication gives the recent results about photovoltaic actions in a metal/porous silicon/p-type silicon (MPS) structure. The spectral response range is very wide from 350 nm to 1100 nm. The open circuit voltage increases linearly with decreasing of temperature, but has no longer a linear relationship with logarithm of the illuminated power density. These results can be explained on the basis of assuming that the metal/porous silicon (M/PS) Schottky junction plays a main role in the photovoltaic effects, while the PS/p-Si heterojunction impedes the carrier transport

Keywords

Schottky barriers; Schottky diodes; elemental semiconductors; gold; photodiodes; photovoltaic effects; porous materials; semiconductor-metal boundaries; silicon; 350 to 1100 nm; Al-Si-Si; Au-Si-Si; MPS structure; Schottky junction; carrier transport; illuminated power density; open circuit voltage; photovoltaic actions; spectral response range; Artificial intelligence; Gold; Heterojunctions; Photovoltaic effects; Photovoltaic systems; Schottky diodes; Semiconductor diodes; Silicon; Solar power generation; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499272

Filename

499272