The electronic conduction mechanism of hydrogenated nanocrystalline silicon films

Author

Yu, Mingbin ; Luo, Jinsheng ; He, Yuliang

Author_Institution

Sch. of Electron. & Inf. Eng., Xi´´an Jiaotong Univ., China

fYear

1995

Firstpage

66

Lastpage

68

Abstract

The hydrogenated nano-crystalline silicon films (nc-Si:H) were prepared by using the ultra-high vaccum PECVD system. The nc-Si:H films consist of a mass of nano-grains and a great deal of interfaces between grains. It was found that the room temperature conductivity of nc-Si:H is in the range of 10^-3~10⁰ (Q·cm)^-1, which is higher than that of intrinsic crystalline silicon. In this paper, the two-phase random composite model was used to calculate the conductivities of crystalline grains and interface of nc-Si:H films. The results show that the high conductivity of nc-Si:H arises from the contribution of the crystalline grains. Based on the experimental and calculating results the conduction model of nc-Si:H films is proposed

Keywords

electrical conductivity; elemental semiconductors; hydrogen; nanostructured materials; plasma CVD coatings; semiconductor thin films; silicon; 1E-3 to 1E0 (ohmcm)^-1; 293 K; PECVD; Si:H; crystalline grains; electronic conduction; hydrogenated nanocrystalline films; semiconductor; two-phase random composite model; Conductive films; Conductivity; Crystallization; Grain size; Helium; Microelectronics; Microstructure; Semiconductor films; Silicon; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499273

Filename

499273