DocumentCode
1656032
Title
SPICE model for the single electron tunnel junction
Author
van de Haar, R. ; Klunder, Roelof H. ; Hoekstra, Jaap
Author_Institution
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Volume
3
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
1445
Abstract
In this paper a SPICE model for a single electron tunnel junction is given. The model is derived from a new formulation of the tunnel condition based on voltages over the tunnel junctions. To validate the model an electron box is simulated
Keywords
SPICE; semiconductor device models; single electron transistors; tunnelling; SET device; SET-model; SPICE model; electron box simulation; single electron tunnel junction; Charge transfer; Circuit simulation; Electronic mail; Electrons; Integrated circuit modeling; Nanoelectronics; Nanoscale devices; SPICE; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN
0-7803-7057-0
Type
conf
DOI
10.1109/ICECS.2001.957487
Filename
957487
Link To Document