DocumentCode
1656055
Title
The application of porous silicon technology in thermistor sensor
Author
Wang, Xinjun ; Lai, Zongsheng
Author_Institution
Dept. of Electron Eng., East China Normal Univ., Shanghai, China
fYear
1995
Firstpage
72
Lastpage
74
Abstract
The process of the porous silicon layer formation and etching off is a new generation surface micromachining technology. Using porous silicon as a sacrificial layer, microbridge and flow channel with a large distance from the structure to the substrate is realized. A thermistor sensor is made by the technology and its characteristics described
Keywords
electric sensing devices; elemental semiconductors; etching; porous materials; silicon; thermistors; Si; etching; flow channel; layer formation; microbridge; porous semiconductor technology; sacrificial layer; surface micromachining technology; thermistor sensor; Aluminum; Boron; Etching; Fabrication; Hafnium; Sensor phenomena and characterization; Silicon; Substrates; Thermal sensors; Thermistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.499275
Filename
499275
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