Title :
The application of porous silicon technology in thermistor sensor
Author :
Wang, Xinjun ; Lai, Zongsheng
Author_Institution :
Dept. of Electron Eng., East China Normal Univ., Shanghai, China
Abstract :
The process of the porous silicon layer formation and etching off is a new generation surface micromachining technology. Using porous silicon as a sacrificial layer, microbridge and flow channel with a large distance from the structure to the substrate is realized. A thermistor sensor is made by the technology and its characteristics described
Keywords :
electric sensing devices; elemental semiconductors; etching; porous materials; silicon; thermistors; Si; etching; flow channel; layer formation; microbridge; porous semiconductor technology; sacrificial layer; surface micromachining technology; thermistor sensor; Aluminum; Boron; Etching; Fabrication; Hafnium; Sensor phenomena and characterization; Silicon; Substrates; Thermal sensors; Thermistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499275
