Photoelectrochemical characterization of GaAs and doped Fe2 O3 semiconductive electrodes

The characterization for semiconductive electrodes of GaAs and Fe ₂O₃ doped with MgO or CaO was investigated. The doped Fe₂O₃ semiconductive electrodes were prepared from thin films sintered at temperatures from 1100 to 1450°C, and rapidly quenched in distilled water. The surfaces of the electrodes containing both corundum structure Fe₂O₃ and spinel structure Mg_xFe_3-xO₄ or Ca_xFe_3-x O₄ were analyzed by X-ray diffraction. The critical anodic and cathodic photocurrents on these electrodes were obtained at a doping amount of 5~11 wt%. When the GaAs electrodes were treated with methylene violet, the anodic photocurrents were temporarily enhanced and inverted to the cathodic photocurrents after the treated surface was dried