Title :
Photoelectrochemical characterization of GaAs and doped Fe2 O3 semiconductive electrodes
Author :
Kim, II-Kwang ; Jeong, Seung-II ; Oh, Gi-Su ; Shin, Chung-Sik ; Park, Tae-Young
Author_Institution :
Dept. of Chem., Wonkwang Univ., Iksan City, South Korea
Abstract :
The characterization for semiconductive electrodes of GaAs and Fe 2O3 doped with MgO or CaO was investigated. The doped Fe2O3 semiconductive electrodes were prepared from thin films sintered at temperatures from 1100 to 1450°C, and rapidly quenched in distilled water. The surfaces of the electrodes containing both corundum structure Fe2O3 and spinel structure MgxFe3-xO4 or CaxFe3-x O4 were analyzed by X-ray diffraction. The critical anodic and cathodic photocurrents on these electrodes were obtained at a doping amount of 5~11 wt%. When the GaAs electrodes were treated with methylene violet, the anodic photocurrents were temporarily enhanced and inverted to the cathodic photocurrents after the treated surface was dried
Keywords :
III-V semiconductors; X-ray diffraction; calcium compounds; electrochemical electrodes; electrolysis; gallium arsenide; iron compounds; magnesium compounds; photoelectrochemical cells; semiconductor doping; semiconductor materials; semiconductor-electrolyte boundaries; voltammetry (chemical analysis); 1100 to 1450 C; Fe2O3:CaO; Fe2O3:MgO; GaAs; GaAs semiconductive electrodes; X-ray diffraction; critical anodic photocurrents; critical cathodic photocurrents; cyclic voltammetry; doped Fe2O3 semiconductive electrodes; doping amount; electrode surface; methylene violet; photoelectrochemical characterization; photoelectrolysis; rapid quenching; sintering; thin films; Cities and towns; Electrodes; Gallium arsenide; Hydrogen; Iron; Photoconductivity; Semiconductor thin films; Surface treatment; Temperature; X-ray diffraction;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.617667
