Title :
On-state reliability of amorphous silicon antifuses
Author :
Zhang, G. ; King, Y. ; Elfoukhy, S. ; Hamdy, E. ; Jing, T. ; Yu, P. ; Hu, C.
Author_Institution :
Dept. of Phys., California Univ., Berkeley, CA, USA
Abstract :
A unified model of the on-state reliability of a-Si antifuses is presented. This physical model accounts for both thermal activation and electromigration. Temperature at the conductive link is the temperature at which the antifuse is stressed and is controlled by the stress current, not the ambient. To ensure a 10 year lifetime, a-Si antifuses should be operated at a current value less than 60% of its programming current value
Keywords :
amorphous semiconductors; electric fuses; electromigration; elemental semiconductors; failure analysis; field programmable gate arrays; metal-semiconductor-metal structures; semiconductor device models; semiconductor device reliability; silicon; 10 year; FPGA; MSM type; Si; amorphous Si antifuses; conductive link; electromigration; on-state reliability; physical model; stress current; thermal activation; unified model; Amorphous silicon; Circuits; Current density; Electromigration; Failure analysis; Laboratories; Physics; Stress control; Temperature; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499281
