• DocumentCode
    1656178
  • Title

    Determination of metals impurity concentrations in semiconductor gases

  • Author

    Wong, Carol ; Amato, Anthony F. ; Brzychcy, Ann Marie

  • Author_Institution
    Matheson Gas Products, Newark, CA, USA
  • fYear
    1994
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    Monitoring metals concentration in semiconductor gases requires a variety of sampling techniques. The chemical and physical nature of the matrix gas are what determine which method is most appropriate. Due to the non-homogeneity of metals concentrations in the gases and the lack of information corresponding to the exact chemical composition of each metal impurity present, the extraction efficiency of sampling methods is difficult to verify. Therefore, the sampling methods are designed to capture the majority of metals contaminants whether in solid or vapor form. The focus of this paper is to review the current sampling techniques and analytical methods applied to metals determination in semiconductor gases
  • Keywords
    impurities; analytical methods; contaminants; metals impurity concentrations; sampling techniques; semiconductor gases; Chemicals; Contamination; Data mining; Gases; Hydrogen; Monitoring; Sampling methods; Semiconductor impurities; Solids; Valves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • Print_ISBN
    0-7803-2053-0
  • Type

    conf

  • DOI
    10.1109/ASMC.1994.588250
  • Filename
    588250