DocumentCode
1656178
Title
Determination of metals impurity concentrations in semiconductor gases
Author
Wong, Carol ; Amato, Anthony F. ; Brzychcy, Ann Marie
Author_Institution
Matheson Gas Products, Newark, CA, USA
fYear
1994
Firstpage
211
Lastpage
214
Abstract
Monitoring metals concentration in semiconductor gases requires a variety of sampling techniques. The chemical and physical nature of the matrix gas are what determine which method is most appropriate. Due to the non-homogeneity of metals concentrations in the gases and the lack of information corresponding to the exact chemical composition of each metal impurity present, the extraction efficiency of sampling methods is difficult to verify. Therefore, the sampling methods are designed to capture the majority of metals contaminants whether in solid or vapor form. The focus of this paper is to review the current sampling techniques and analytical methods applied to metals determination in semiconductor gases
Keywords
impurities; analytical methods; contaminants; metals impurity concentrations; sampling techniques; semiconductor gases; Chemicals; Contamination; Data mining; Gases; Hydrogen; Monitoring; Sampling methods; Semiconductor impurities; Solids; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-2053-0
Type
conf
DOI
10.1109/ASMC.1994.588250
Filename
588250
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