Title :
Low-noise 650 nm-band AlGaInP visible lasers with highly-doped saturable absorbing (HDSA) layer
Author :
Kidoguchi, I. ; Adachi, H. ; Kamiyama, S. ; Fukuhisa, T. ; Mannoh, M. ; Takamori, A. ; Uenoyama, T.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Self-sustained pulsating 650 nm-band AlGaInP visible laser diodes were successfully demonstrated by adopting novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for pulsation, was realized by applying high doping concentration to the saturable absorbing layer. 500 μm-long devices with 51%/51% coated facets were fabricated, resulting in the threshold current of 65 mA at room temperature. The relative intensity noise was below -134 dB/Hz in the temperature ranging from 20 to 60°C at 5 mW
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; gallium compounds; heavily doped semiconductors; indium compounds; laser noise; laser transitions; optical saturable absorption; semiconductor device noise; semiconductor lasers; 20 to 60 C; 5 mW; 500 micron; 65 mA; 650 nm; AlGaInP; carrier lifetime; high doping concentration; highly-doped saturable absorbing layer; laser diodes; low-noise visible lasers; relative intensity noise; self-sustained pulsating LD; Charge carrier density; Charge carrier lifetime; Diode lasers; Doping; Electrons; Epitaxial growth; Optical mixing; Optical noise; Optical pumping; Semiconductor device noise;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499284
