DocumentCode
1656328
Title
Fabrication of well ordered Zn nanorod arrays by ion irradiation method at room temperature and effect on crystal orientations
Author
Kutsuna, Masaki ; Ghosh, Pradip ; Kudo, Masato ; Tanemura, Masaki ; Hayashi, Yasuhiko
Author_Institution
Dept. of Frontier Mater., Nagoya Inst. of Technol., Nagoya, Japan
fYear
2010
Firstpage
436
Lastpage
437
Abstract
Highly oriented and densely packed one dimensional (1D) polycrystalline Zn nanorods were fabricated on zinc plate without any catalyst at room temperature by bombardment with obliquely incident Ar+ ion via ion irradiation method. The sputtered surfaces were fully covered with Zn nanostructures with diameter and the length around 60 nm and 1.3 ¿m, respectively, confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The numerical density of Zn nanostructures (nanoneedle or nanorods) was found to be 2.1 à 106 to 9 à 106 /mm2 depends upon the crystal orientation and the atomic density on different crystallographic faces. The outstanding feature of this growth technique is that it provides a new direction for the controllable growth of desired nanostructures of variable density at room temperature without any catalyst. These well-aligned arrays of Zn nanorods/nanoneedle might be a promising material for the future application in nanodevices.
Keywords
crystal orientation; ion beam assisted deposition; ion beam effects; nanofabrication; nanorods; scanning electron microscopy; sputter deposition; transmission electron microscopy; zinc; 1D nanorod arrays; SEM; TEM; Zn; atomic density; catalyst; crystal orientation; densely packed 1D polycrystalline nanorods; ion bombardment; ion irradiation; nanoneedle; scanning electron microscopy; temperature 293 K to 298 K; transmission electron microscopy; well ordered nanorod arrays; Argon; Crystalline materials; Crystallography; Fabrication; Nanostructured materials; Nanostructures; Scanning electron microscopy; Temperature control; Transmission electron microscopy; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424501
Filename
5424501
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