Structural and optical properties of AlxZn1−xO alloys by sol-gel technique

Author

Wei, Min ; Deng, Xueran ; Xueran Deng ; Yang, Chunrong ; Chen, Jinju

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Eletronic Sci. & Technol. of China, Chengdu, China

fYear

2010

Firstpage

442

Lastpage

443

Abstract

We propose a widegap II-VI semiconductor alloy, Al_xZn_1-xO, a material system for the fabrication of ultraviolet optoelectronic devices. Al_xZn_1-xO (x=0~0.5) thin films were prepared on quartz glass substrates by sol-gel method. The microstructure analysis of films indicated that the wurtzite structure of ZnO disappeared as the Al doping exceeds 20at%. These films also showed high transmittance in the visible region and the absorption edge had obvious blue shift with the increasing of Al concentration. It was found that optimally ultraviolet Photoconductivity when the Al concentration is 30at% were obtained.

Keywords

II-VI semiconductors; aluminium compounds; semiconductor thin films; sol-gel processing; zinc compounds; AlZnO; absorption edge; blue shift; microstructure analysis; optical properties; optimally ultraviolet photoconductivity; quartz glass substrates; sol-gel technique; structural properties; thin films; ultraviolet optoelectronic devices; visible region; widegap II-VI semiconductor alloy; wurtzite structure; Glass; II-VI semiconductor materials; Optical device fabrication; Optical films; Optical materials; Optoelectronic devices; Semiconductor materials; Semiconductor thin films; Substrates; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424504

Filename

5424504