High performance InAlAs/InGaAs/InP HEMT/MSM-based OEIC photoreceivers

Author

Adesida, I. ; Fay, P. ; Wohlmuth, W. ; Caneau, C.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

fYear

1995

Firstpage

579

Lastpage

582

Abstract

A high-speed, monolithically integrated photoreceiver suitable for 1.55 μm wavelength optical communication systems is described. The tunable photoreceiver, implemented using a metal-semiconductor-metal (MSM) photodetector and InAlAs/InGaAs/InP high electron mobility transistor (HEMT)-based transimpedance amplifier, exhibits -3 dB bandwidths of up to 17 GHz. Noise measurements revealed an input-referred noise current spectral density of 8 pA/Hz^1/2 when tuned for 10 Gb/s operation, and 12 pA/Hz^1/2 when tuned for 20 Gb/s operation. This results in a projected sensitivity of -16.5 dBm and -12.3 dBm at 10 and 20 Gb/s, respectively, for a bit error rate of 1×10^-9

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; 1.55 micrometre; 10 Gbit/s; 17 GHz; 20 Gbit/s; HEMT/MSM-based OEIC; InAlAs-InGaAs-InP; bit error rate; input-referred noise current spectral density; noise measurements; optical communication systems; photodetector; projected sensitivity; transimpedance amplifier; tunable photoreceiver; Bandwidth; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Optical amplifiers; Optical fiber communication; Optoelectronic devices; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499288

Filename

499288