Title :
Fabricating ZnO nanowires-based humidity sensor via dielectrophoresis method
Author :
Wang, Yun ; Yeow, John T W ; Yin, Yu-Tung ; Chen, Liang-Yih
Author_Institution :
Dept. of Syst. Design Eng., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
In this study, ZnO nanowires based humidity sensors were manipulated by dielectrophoresis (DEP) method. ZnO nanowires were grown by hydrothermal method at low temperature (95°C) for 3-24 hr. From the manipulation, we can know that electrical field and vaporization rate of suspension solution will affect the alignment of ZnO nanowires seriously. In the humidity sensor test, the sensor´s resistance increases with increasing RH% level. It showed very high sensitivity, which can reach 450% when the RH% is 100%. The response at 0%-30% and 50%-100% RH% is almost linear. However, a strange observation is that, after increasing the RH% in steps to 100%, when decrease the RH% in steps to 0%. The dynamic response of the resistance to RH% change between extra dry air and saturated air is shown that the sensor can reach 90% of the total change in seconds.
Keywords :
II-VI semiconductors; crystal growth from solution; electrophoresis; humidity sensors; nanofabrication; nanosensors; nanowires; wide band gap semiconductors; zinc compounds; ZnO; dielectrophoresis; electrical field; humidity sensor; hydrothermal growth; nanowires; temperature 95 degC; time 3 hr to 24 hr; vaporization rate; Assembly; Chemical sensors; Dielectrophoresis; Humidity; Nanowires; Scanning electron microscopy; Sensor phenomena and characterization; Substrates; Temperature sensors; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424506