• DocumentCode
    1656497
  • Title

    A Write-Optimized B-Tree Layer for NAND Flash Memory

  • Author

    Gong, Xiaona ; Chen, Shuyu ; Lin, Mingwei ; Liu, Haozhang

  • Author_Institution
    Sch. of Comput. Sci. & Technol., Chongqing Univ., Chongqing, China
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    For B-tree index structure which requires intensively fine-grained updates/modifications, directly implementing this index structure over flash memory could lead to a significant number of write operations. In this paper, a write-optimized B-tree layer is proposed called WOBF which works over FTL in the flash memory. It could not only reduce the number of write operations by buffering index units in the index buffer and handling them in a batch, but also eliminate the number of pages used to store the index units reflecting the modified node. The performance benefits are proven theoretically and validated empirically.
  • Keywords
    NAND circuits; flash memories; FTL; NAND flash memory; WOBF; buffering index units; write-optimized B-tree layer; Algorithm design and analysis; Buffer storage; Flash memory; Indexes; Memory management; Performance evaluation; Time factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Communications, Networking and Mobile Computing (WiCOM), 2011 7th International Conference on
  • Conference_Location
    Wuhan
  • ISSN
    2161-9646
  • Print_ISBN
    978-1-4244-6250-6
  • Type

    conf

  • DOI
    10.1109/wicom.2011.6040592
  • Filename
    6040592