DocumentCode
1656497
Title
A Write-Optimized B-Tree Layer for NAND Flash Memory
Author
Gong, Xiaona ; Chen, Shuyu ; Lin, Mingwei ; Liu, Haozhang
Author_Institution
Sch. of Comput. Sci. & Technol., Chongqing Univ., Chongqing, China
fYear
2011
Firstpage
1
Lastpage
4
Abstract
For B-tree index structure which requires intensively fine-grained updates/modifications, directly implementing this index structure over flash memory could lead to a significant number of write operations. In this paper, a write-optimized B-tree layer is proposed called WOBF which works over FTL in the flash memory. It could not only reduce the number of write operations by buffering index units in the index buffer and handling them in a batch, but also eliminate the number of pages used to store the index units reflecting the modified node. The performance benefits are proven theoretically and validated empirically.
Keywords
NAND circuits; flash memories; FTL; NAND flash memory; WOBF; buffering index units; write-optimized B-tree layer; Algorithm design and analysis; Buffer storage; Flash memory; Indexes; Memory management; Performance evaluation; Time factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Communications, Networking and Mobile Computing (WiCOM), 2011 7th International Conference on
Conference_Location
Wuhan
ISSN
2161-9646
Print_ISBN
978-1-4244-6250-6
Type
conf
DOI
10.1109/wicom.2011.6040592
Filename
6040592
Link To Document