Title :
Lateral backward diodes as strain sensors
Author :
Friedrich, A.P. ; Besse, P.A. ; Fullin, E. ; Popovic, R.S.
Author_Institution :
Microtechnol. Syst. Group, Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
We present a new type of lateral backward silicon diode intended to be used as a strain sensor. The devices are fabricated using a close-to-conventional silicon technology. The diodes have a prevailing tunnelling current around zero bias. They exhibit a high strain sensitivity and a low temperature coefficient of opposite sign to that of conventional piezoresistors
Keywords :
elemental semiconductors; sensitivity; silicon; strain sensors; tunnel diodes; Si; lateral backward diodes; strain sensitivity; strain sensors; temperature coefficient; tunnelling current; zero bias; Capacitive sensors; Diodes; Doping; Fabrication; Piezoresistive devices; Silicon; Strain measurement; Temperature sensors; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499292
