DocumentCode
1656572
Title
Stochastic bistable switching in CMOS-processed PECVD silicon nitride ring resonators
Author
Gu, T. ; Zheng, J. ; McMillan, J.F. ; Yu, M. ; Lo, G.Q. ; Kwong, D.L. ; Wong, C.W.
Author_Institution
Opt. Nanostruct. Lab., Columbia Univ., New York, NY, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
Absorptive optical nonlinearity is demonstrated in silicon nitride rings with ~244,000 intrinsic quality factors. Thermal induced optical nonlinearity leads to stochastic bistable switching in the absence of free carrier dispersion, towards CMOS-compatible photonic integrated circuits.
Keywords
integrated optics; optical bistability; optical resonators; optical switches; plasma CVD coatings; silicon compounds; thermo-optical devices; CMOS compatible photonic integrated circuits; CMOS processed PECVD ring resonator; SiN; absorptive optical nonlinearity; stochastic bistable switching; thermal induced optical nonlinearity; Absorption; Cavity resonators; Optical bistability; Optical pumping; Optical switches; Optical waveguides; Propagation losses;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325771
Link To Document