DocumentCode
1656589
Title
Synthesis of one-dimensional (1D) Ge-based ternary oxide nanostructures
Author
Chaoyi, Yan ; See, Lee Pooi
Author_Institution
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2010
Firstpage
408
Lastpage
409
Abstract
Ternary complex oxide nanostructures of Ge-based materials, such as indium germanate (In2Ge2O7, IGO) and zinc germanate (Zn2GeO4, ZGO), were successfully synthesized by a chemical vapor transport method. Morphologies of the nanostructures can be efficiently tuned by controlling the growth conditions, and various 1D nanostructures of the germanates (nanotubes, nanowires, nanobelts and hierarchical nanostructures) were synthesized. Structures and compositions of the nanostructures were characterized by SEM, TEM, XRD and EDS. It is believed that this method can be generalized for the synthesized of other complex oxide nanomaterials. The novel 1D oxide nanomaterials possess their potential applications in nanoelectronic and optoelectronic devices.
Keywords
X-ray chemical analysis; X-ray diffraction; indium compounds; nanobelts; nanotubes; nanowires; scanning electron microscopy; transmission electron microscopy; zinc compounds; 1D ternary oxide nanostructures; In2Ge2O7; X-ray diffraction; Zn2GeO4; chemical vapor transport method; energy dispersive spectroscopy; hierarchical nanostructures; indium germanate; nanobelts; nanotubes; nanowires; scanning electron microscopy; transmission electron microscopy; zinc germanate; Chemicals; Indium; Morphology; Nanomaterials; Nanostructured materials; Nanostructures; Nanotubes; Nanowires; X-ray scattering; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424513
Filename
5424513
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