Title :
Reliability analysis of full adder in Schottky Barrier Carbon Nanotube FET technology
Author :
Srinivasu, B. ; Sridharan, K.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
The reliability of digital circuits designed in Schottky Barrier Carbon Nanotube Field Effect Transistor (SB-CNTFET) technology is investigated in this paper. We discuss factors that affect the height of the Schottky barrier and as a consequence the performance of circuits in SB-CNTFET. We then present a transistor-level analysis of reliability. The analysis is performed first for an inverter and a 2-to-1 multiplexer. It is then used to get an estimate of the probabilistic behaviour of a one-bit full-adder.
Keywords :
Schottky barriers; adders; carbon nanotubes; field effect transistors; integrated circuit reliability; invertors; multiplexing equipment; probability; 2-to-1 multiplexer; SB-CNTFET; Schottky barrier carbon nanotube FET technology; field effect transistor technology; inverter; one-bit full-adder; probabilistic behaviour; reliability analysis; transistor-level analysis; CNTFETs; Equations; Integrated circuit reliability; Inverters; Multiplexing; Adder; Multiplexer; Nanoelectronic circuits; Reliability; Schottky Barrier Carbon Nanotube Field Effect Transistor;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968085
