• DocumentCode
    1656765
  • Title

    Defect engineering in semiconductors for nanoelectronic devices

  • Author

    Seebauer, Edmund G.

  • Author_Institution
    Dept. of Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2010
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    Many designs for nanoelectronic devices rely on semiconductor materials, whose properties depend upon point defects. Control of the number and spatial distribution of these defects is becoming increasingly important. Here, principles are outlined for accomplishing such control via manipulation of the chemical state of nearby surfaces and via photostimulation. The key mechanisms have been discovered only recently, and should operate with special effectiveness at the nanoscale.
  • Keywords
    elemental semiconductors; interstitials; nanoelectronics; nanofabrication; nanostructured materials; silicon; Si; chemical state; defect engineering; nanoelectronic devices; photostimulation; point defects; semiconductors; Chemical engineering; Design engineering; Gas detectors; Lighting; Nanoscale devices; Nanowires; Semiconductor materials; Silicon; Surface cleaning; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424520
  • Filename
    5424520