DocumentCode :
1656765
Title :
Defect engineering in semiconductors for nanoelectronic devices
Author :
Seebauer, Edmund G.
Author_Institution :
Dept. of Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2010
Firstpage :
58
Lastpage :
59
Abstract :
Many designs for nanoelectronic devices rely on semiconductor materials, whose properties depend upon point defects. Control of the number and spatial distribution of these defects is becoming increasingly important. Here, principles are outlined for accomplishing such control via manipulation of the chemical state of nearby surfaces and via photostimulation. The key mechanisms have been discovered only recently, and should operate with special effectiveness at the nanoscale.
Keywords :
elemental semiconductors; interstitials; nanoelectronics; nanofabrication; nanostructured materials; silicon; Si; chemical state; defect engineering; nanoelectronic devices; photostimulation; point defects; semiconductors; Chemical engineering; Design engineering; Gas detectors; Lighting; Nanoscale devices; Nanowires; Semiconductor materials; Silicon; Surface cleaning; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424520
Filename :
5424520
Link To Document :
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