DocumentCode
1656765
Title
Defect engineering in semiconductors for nanoelectronic devices
Author
Seebauer, Edmund G.
Author_Institution
Dept. of Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
fYear
2010
Firstpage
58
Lastpage
59
Abstract
Many designs for nanoelectronic devices rely on semiconductor materials, whose properties depend upon point defects. Control of the number and spatial distribution of these defects is becoming increasingly important. Here, principles are outlined for accomplishing such control via manipulation of the chemical state of nearby surfaces and via photostimulation. The key mechanisms have been discovered only recently, and should operate with special effectiveness at the nanoscale.
Keywords
elemental semiconductors; interstitials; nanoelectronics; nanofabrication; nanostructured materials; silicon; Si; chemical state; defect engineering; nanoelectronic devices; photostimulation; point defects; semiconductors; Chemical engineering; Design engineering; Gas detectors; Lighting; Nanoscale devices; Nanowires; Semiconductor materials; Silicon; Surface cleaning; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424520
Filename
5424520
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