Substantial advantages of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components compared with its bulk-CMOS counterpart

Author

Kado, Y. ; Inokawa, H. ; Okazaki, Y. ; Tsuchiya, T. ; Kawai, Y. ; Sato, M. ; Sakakibara, Y. ; Nakayama, S. ; Yamada, H. ; Kitamura, M. ; Nakashima, S. ; Nishimura, K. ; Date, S. ; Ino, M. ; Takeya, K. ; Sakai, T.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1995

Firstpage

635

Lastpage

638

Abstract

The properties of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components are presented. When compared with bulk devices the steeper subthreshold slope of the SIMOX device allows one to enhance the performance of multipliers and SRAMs at low supply voltages without increasing the leakage current. The controllability of the threshold voltage statistical spreading and the standby leakage current of SIMOX LSI is also demonstrated

Keywords

CMOS digital integrated circuits; SIMOX; VLSI; characteristics measurement; integrated circuit measurement; leakage currents; multiplying circuits; SRAMs; controllability; fully-depleted CMOS/SIMOX devices; low-power VLSI components; multipliers; standby leakage current; subthreshold slope; threshold voltage statistical spreading; CMOS logic circuits; CMOS technology; Controllability; Large scale integration; Leakage current; Low voltage; MOS devices; MOSFETs; Random access memory; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499300

Filename

499300