Damascene planar metal-insulator-metal tunnel junctions

Author

Droulers, Gabriel ; Ecoffey, Serge ; Guilmain, Marc ; Souifi, Abdelkader ; Pioro-Ladriere, Michel ; Drouin, Dominique

Author_Institution

Lab. Nanotechnol. Nanosystemes (LN2), Univ. de Sherbrooke, Sherbrooke, QC, Canada

fYear

2014

fDate

18-21 Aug. 2014

Firstpage

884

Lastpage

887

Abstract

In this paper, we show a process for the fabrication of planar sub-attofarad capacitance metal-insulator-metal tunnel junctions with nanometer size. We show the engineering of the material stack, anti-diffusion barrier and electrode metal as well as the result of improved characteristics and stability in time of the devices. This engineering is supported by a simulation tool we developed and its goal is to optimize the original process for the development of high-temperature operating SETs and other innovative nanoelectronic devices.

Keywords

MIM devices; diffusion barriers; electrodes; nanoelectronics; nanofabrication; nanostructured materials; single electron transistors; tunnelling; antidiffusion barrier; damascene planar metal-insulator-metal tunnel junctions; electrode metal; high-temperature operating SETs; innovative nanoelectronic devices; material stack; nanometer size; planar subattofarad capacitance metal-insulator-metal tunnel junctions; Aluminum oxide; Junctions; Materials; Oxidation; Plasmas; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on

Conference_Location

Toronto, ON

Type

conf

DOI

10.1109/NANO.2014.6968094

Filename

6968094