Title :
A front gate charge pumping technique for measuring both interfaces in fully depleted SOI/MOSFETs
Author :
Li, Yujun ; Wang, Guobin ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation
Keywords :
MOSFET; electron traps; interface states; silicon-on-insulator; back interface; computer simulation; front gate charge pumping technique; front interface; fully depleted SOI/MOSFETs; interface trap measurement; Charge measurement; Charge pumps; Computer simulation; Current measurement; MOSFETs; Microelectronics; Pulse measurements; Semiconductor device measurement; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499302
