• DocumentCode
    1656925
  • Title

    Functional inorganic nanostructures, new opportunities for future electronics

  • Author

    Duan, Xiangfeng

  • Author_Institution
    Dept. of Chem. & Biochem., UCLA, Los Angeles, CA, USA
  • fYear
    2010
  • Firstpage
    69
  • Lastpage
    69
  • Abstract
    Silicon based semiconductor electronics have experienced enormous growth in the past several decades and are rapidly evolving into two extremes: highly integrated circuits with device size approaching single digit nanometer scale (nanoelectronics) and large area electronics with system size measured in square meters (macroelectronics). However, significant challenges are expected in both extremes. Functional inorganic nanostructures, with precisely controlled chemical composition, physical dimension and electronic properties, can offer unique opportunities to address these critical challenges. In this talk, I will discuss several examples to illustrate the potential of exploring functional inorganic nanostructures to address the emerging challenges in semiconductor electronics.
  • Keywords
    monolithic integrated circuits; nanoelectronics; nanostructured materials; semiconductor devices; semiconductors; chemical composition; device size; inorganic nanostructures; integrated circuits; macroelectronics; nanoelectronics; physical dimension; semiconductor electronics; Chemistry; FETs; Nanoscale devices; Nonvolatile memory; Photonic band gap; Semiconductor nanostructures; Silicon; Substrates; Temperature; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424526
  • Filename
    5424526