DocumentCode
1656925
Title
Functional inorganic nanostructures, new opportunities for future electronics
Author
Duan, Xiangfeng
Author_Institution
Dept. of Chem. & Biochem., UCLA, Los Angeles, CA, USA
fYear
2010
Firstpage
69
Lastpage
69
Abstract
Silicon based semiconductor electronics have experienced enormous growth in the past several decades and are rapidly evolving into two extremes: highly integrated circuits with device size approaching single digit nanometer scale (nanoelectronics) and large area electronics with system size measured in square meters (macroelectronics). However, significant challenges are expected in both extremes. Functional inorganic nanostructures, with precisely controlled chemical composition, physical dimension and electronic properties, can offer unique opportunities to address these critical challenges. In this talk, I will discuss several examples to illustrate the potential of exploring functional inorganic nanostructures to address the emerging challenges in semiconductor electronics.
Keywords
monolithic integrated circuits; nanoelectronics; nanostructured materials; semiconductor devices; semiconductors; chemical composition; device size; inorganic nanostructures; integrated circuits; macroelectronics; nanoelectronics; physical dimension; semiconductor electronics; Chemistry; FETs; Nanoscale devices; Nonvolatile memory; Photonic band gap; Semiconductor nanostructures; Silicon; Substrates; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424526
Filename
5424526
Link To Document