DocumentCode :
1656925
Title :
Functional inorganic nanostructures, new opportunities for future electronics
Author :
Duan, Xiangfeng
Author_Institution :
Dept. of Chem. & Biochem., UCLA, Los Angeles, CA, USA
fYear :
2010
Firstpage :
69
Lastpage :
69
Abstract :
Silicon based semiconductor electronics have experienced enormous growth in the past several decades and are rapidly evolving into two extremes: highly integrated circuits with device size approaching single digit nanometer scale (nanoelectronics) and large area electronics with system size measured in square meters (macroelectronics). However, significant challenges are expected in both extremes. Functional inorganic nanostructures, with precisely controlled chemical composition, physical dimension and electronic properties, can offer unique opportunities to address these critical challenges. In this talk, I will discuss several examples to illustrate the potential of exploring functional inorganic nanostructures to address the emerging challenges in semiconductor electronics.
Keywords :
monolithic integrated circuits; nanoelectronics; nanostructured materials; semiconductor devices; semiconductors; chemical composition; device size; inorganic nanostructures; integrated circuits; macroelectronics; nanoelectronics; physical dimension; semiconductor electronics; Chemistry; FETs; Nanoscale devices; Nonvolatile memory; Photonic band gap; Semiconductor nanostructures; Silicon; Substrates; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424526
Filename :
5424526
Link To Document :
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