DocumentCode :
1657037
Title :
High efficient self-assembly CdSe/ZnS quantum dots light-emitting devices in organic matrix
Author :
Uddin, A. ; Teo, C.C.
Author_Institution :
Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2010
Firstpage :
750
Lastpage :
751
Abstract :
We have fabricated and investigated the effect of CdSe/ZnS quantum dot (QD) concentrations on self-assembly hybrid organic/inorganic light emitting diodes (QD-OLEDs). The uniform distribution of QDs with controllable density was achieved using the conventional spin-coating method. There was a QD threshold concentration below which there was no emission from the QDs. The estimated QD concentration was around 9 × 1011 cm-2 for the best performance of QD-OLED. The QD emission was increased about three times by annealing of QD-OLED.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; light emitting diodes; organic-inorganic hybrid materials; self-assembly; semiconductor quantum dots; spin coating; wide band gap semiconductors; zinc compounds; CdSe-ZnS; annealing; hybrid organic-inorganic light emitting diodes; quantum dots; self-assembly; spin coating; threshold concentration; Active matrix organic light emitting diodes; Annealing; Chemicals; Inorganic light emitting diodes; Luminescence; Organic light emitting diodes; Quantum dots; Self-assembly; Surface topography; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424530
Filename :
5424530
Link To Document :
بازگشت