DocumentCode :
1657151
Title :
Growth of metal-free carbon nanotubes with amorphous carbon catalyst layer on glass substrates by microwave plasma enhanced chemical vapor deposition
Author :
Seo, Jae Keun ; Ko, Ki-han ; Kim, Jaekwang ; Lee, Yu Sung ; Kang, Eun Kyu ; Lee, Jae-Hyeoung ; Choi, Won Seok
Author_Institution :
Dept. of Electr. Eng., Hanbat Nat. Univ., Daejeon, South Korea
fYear :
2010
Firstpage :
79
Lastpage :
80
Abstract :
We have investigated growth of metal-free carbon nanotubes (CNTs) on glass substrates with a microwave plasma enhanced chemical vapor deposition (MPECVD) method. An amorphous carbon (a-C) film was used as a catalyst layer to grow metal-free CNTs. The a-C films were deposited with a RF magnetron sputtering method using carbon target at room temperature on glass substrates. The CNTs were prepared using a microwave plasma-enhanced chemical vapor deposition (MPECVD) method by using methane (CH4) and hydrogen (H2) gas. We have pretreated a-C catalyst layer using H2 plasma at 700°C and the CNTs were grown at different temperatures (350°C, 450°C and 550°C) and other conditions were fixed. The growth trends of CNTs against temperature were observed by field emission scanning electron microscopy (FE-SEM).
Keywords :
carbon nanotubes; plasma CVD; scanning electron microscopy; sputter deposition; C; H2 layer; RF magnetron sputtering; SiO2; amorphous carbon catalyst layer; amorphous carbon film; carbon target; catalyst layer; field emission scanning electron microscopy; glass substrates; hydrogen gas; metal-free carbon nanotubes growth; methane; microwave plasma enhanced chemical vapor deposition; pretreated a-C catalyst layer; temperature 293 K to 973 K; Amorphous magnetic materials; Amorphous materials; Carbon nanotubes; Chemical vapor deposition; Glass; Microwave theory and techniques; Plasma chemistry; Plasma temperature; Radio frequency; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424535
Filename :
5424535
Link To Document :
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