Title :
Characterization and optimization of NO-nitrided gate oxide by RTP
Author :
Sun, S.C. ; Chen, C.H. ; Yen, Daniel L W ; Lin, C.J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The characteristics and reliability of NO-nitrided gate oxide devices were investigated in detail. Light and heavy nitridations were accomplished using rapid thermal annealing (RTA) of SiO2 in an NO ambient by varying either annealing temperature or annealing time. The effects of nitridation condition on the charge trapping, interface state generation, low- and high-field mobility, radiation hardness as well as hot-carrier reliability were discussed. We also studied channel hot-carrier effects on the irradiated devices. Results indicate that NO-nitrided devices show a significantly reduced transconductance degradation compared to control devices
Keywords :
MOSFET; carrier mobility; dielectric thin films; electric breakdown; gamma-ray effects; hot carriers; interface states; nitridation; nitrogen compounds; radiation hardening (electronics); rapid thermal annealing; semiconductor device reliability; semiconductor-insulator boundaries; NO; NO ambient; NO-nitrided gate oxide; RTA; RTP; SiO2; SiON-Si; annealing temperature; annealing time; channel hot-carrier effects; characterization; charge trapping; high-field mobility; hot-carrier reliability; interface state generation; irradiated devices; low-field mobility; nitridation condition; optimization; radiation hardness; rapid thermal annealing; reliability; transconductance degradation reduction; Degradation; Design for quality; Dielectric devices; Hot carrier effects; Hot carriers; Interface states; Nitrogen; Rapid thermal annealing; Temperature; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499312
