DocumentCode :
1657171
Title :
Ultrafast laser half-beam writing paradox
Author :
Kazansky, Peter G. ; Gecevicius, Mindaugas ; Beresna, Martynas ; Kazansky, Andrey G.
Author_Institution :
Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
Contrary to common belief asymmetric imprinting, revealed as different modification thresholds for two halves of Gaussian beam, is demonstrated in amorphous silicon. The phenomenon is interpreted in terms of anisotropic transport produced by ultrashort light pulses.
Keywords :
Gaussian processes; amorphous semiconductors; elemental semiconductors; laser beams; optical pulse generation; silicon; Gaussian beam; amorphous silicon; anisotropic transport; asymmetric imprinting; different modification thresholds; half-beam writing paradox; ultrafast laser; Films; Laser beams; Laser theory; Optical polarization; Optical pulses; Ultrafast optics; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6325795
Link To Document :
بازگشت