Title :
3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials
Author :
Dongyan, Jia ; Shanjia, Xu ; Xinqing, Sheng
Author_Institution :
Dept. of Electron. Eng. & Inf. Sci., Univ. of Sci. & Technol. of China, Hefei, China
fDate :
6/21/1905 12:00:00 AM
Abstract :
Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.
Keywords :
Hall effect; II-VI semiconductors; carrier density; carrier mobility; dielectric-loaded waveguides; electrical conductivity; waveguide discontinuities; waveguide theory; 3D edge-element analysis; Hall-effect; II-VI semiconductor materials; accuracy; carrier concentration; carrier mobility; characteristic parameters; eigenvalue problem; lossy anisotropic dielectric loaded waveguide; reliability; scattering characteristics; tensor conductivity; Anisotropic magnetoresistance; Conductivity; Dielectric losses; Eigenvalues and eigenfunctions; II-VI semiconductor materials; Loaded waveguides; Scattering; Semiconductor waveguides; Tensile stress; Waveguide discontinuities;
Conference_Titel :
Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on
Print_ISBN :
0-7803-5802-3
DOI :
10.1109/ICCEA.1999.825130
