3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

Author

Dongyan, Jia ; Shanjia, Xu ; Xinqing, Sheng

Author_Institution

Dept. of Electron. Eng. & Inf. Sci., Univ. of Sci. & Technol. of China, Hefei, China

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

298

Lastpage

301

Abstract

Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

Keywords

Hall effect; II-VI semiconductors; carrier density; carrier mobility; dielectric-loaded waveguides; electrical conductivity; waveguide discontinuities; waveguide theory; 3D edge-element analysis; Hall-effect; II-VI semiconductor materials; accuracy; carrier concentration; carrier mobility; characteristic parameters; eigenvalue problem; lossy anisotropic dielectric loaded waveguide; reliability; scattering characteristics; tensor conductivity; Anisotropic magnetoresistance; Conductivity; Dielectric losses; Eigenvalues and eigenfunctions; II-VI semiconductor materials; Loaded waveguides; Scattering; Semiconductor waveguides; Tensile stress; Waveguide discontinuities;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on

Print_ISBN

0-7803-5802-3

Type

conf

DOI

10.1109/ICCEA.1999.825130

Filename

825130