Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

Resistive switching effect has been demonstrated in LaNiO₃Pa_0.7Ca_0.3MnO₃Ti top-down device structures. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.