Title :
Self-aligned metal/IDP Si bipolar technology featuring 14 ps/70 GHz
Author :
Onai, Takahiro ; Ohue, Eiji ; Tanabe, Masamichi ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Self-aligned metal/IDP (SMI) technology is proposed to achieve high-speed bipolar transistors. SMI technology produces stacked metal/in-situ doped poly-Si (IDP) base electrodes that have a small thermal budget to obtain low base resistance and a shallow link base for small-collector capacitance and high-cutoff frequency. A 16.2-ps delay time in an ECL ring oscillator, and a delay time of 14.3 ps in a differential ECL ring oscillator were achieved by using SMI technology with an ion-implanted base
Keywords :
bipolar integrated circuits; bipolar transistors; doping profiles; integrated circuit metallisation; integrated circuit technology; ion implantation; semiconductor device metallisation; silicon; 14 ps; 70 GHz; Si; Si bipolar technology; differential ECL ring oscillator; ion-implanted base; self-aligned metal/in-situ doped poly-Si; shallow link base; stacked metal/in-situ doped polysilicon base electrodes; Bipolar transistors; Capacitance; Cutoff frequency; Delay effects; Electrodes; Fabrication; Ring oscillators; Thermal resistance; Thin film transistors; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499315
