DocumentCode :
1657310
Title :
Extended study of crosstalk in SOI-SIMOX substrates
Author :
Viviani, A. ; Raskin, J.P. ; Flandre, D. ; Colinge, J.P. ; Vanhoenacker, D.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fYear :
1995
Firstpage :
713
Lastpage :
716
Abstract :
This work analyzes crosstalk phenomena in SOI-SIMOX substrates by means of two-dimensional device simulations and measurements on test structures. The influence of the substrate resistivity and of guard rings is studied. The results are compared with those obtained for standard CMOS technology. A significant crosstalk reduction, up to 10 GHz, is obtained with high-resistivity substrates. A simple modeling is proposed to explain and simulate the phenomenon
Keywords :
MOS integrated circuits; SIMOX; crosstalk; integrated circuit modelling; integrated circuit testing; mixed analogue-digital integrated circuits; MOS integrated circuits; SOI-SIMOX substrates; crosstalk; guard rings; mixed-mode ICs; substrate resistivity; test structure measurements; two-dimensional device simulations; Analytical models; CMOS technology; Conductivity; Crosstalk; Frequency; Integrated circuit noise; Measurement standards; Microwave devices; Substrates; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.499318
Filename :
499318
Link To Document :
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