DocumentCode :
165738
Title :
Full band Monte Carlo simulation of phonon transport in semiconductor nanostructures
Author :
Aksamija, Z.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Massachusetts-Amherst, Amherst, MA, USA
fYear :
2014
fDate :
18-21 Aug. 2014
Firstpage :
37
Lastpage :
40
Abstract :
In this paper, a numerical simulation of thermal transport at the nanoscale is developed by solving the phonon Boltzmann transport equation by the Monte Carlo method. A full phonon dispersion is used to determine accurately the vibrational frequencies and group velocities of all phonon modes. Simultaneous conservation of energy and momentum in anharmonic phonon-phonon scattering events in enabled by a novel algorithm developed in this work. The inclusion of rough boundaries and the treatment of their impact on phonon transport is also discussed. The results demonstrate the convergence, accuracy, and efficiency of the proposed simulation.
Keywords :
Boltzmann equation; Monte Carlo methods; nanostructured materials; phonon dispersion relations; semiconductor materials; anharmonic phonon-phonon scattering; energy conservation; full band Monte Carlo simulation; full phonon dispersion; inclusion; numerical simulation; phonon Boltzmann transport equation; phonon mode; rough boundary; semiconductor nanostructure; thermal transport; vibrational frequency; Conductivity; Heating; Nanowires; Phonons; Scattering; Silicon; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
Type :
conf
DOI :
10.1109/NANO.2014.6968118
Filename :
6968118
Link To Document :
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