Title :
Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistor
Author :
Gruhle, A. ; Schüppen, A. ; König, U. ; Erbe, U. ; Schumacher, H.
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Abstract :
Monolithically integrated 26 GHz and 40 GHz VCOs have been built with SiGe heterojunction bipolar transistors (HBT). The tuning range was more than 3 GHz, the output power behind an on-chip 10 dB-attenuator reached -13 dBm. The HBTs and the varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The transistors had an fmax of about 60 GHz and were operated in common-emitter series feedback configuration. Chip sizes including the microstrip resonators were 2×2.8 mm2
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar MIMIC; bipolar MMIC; feedback oscillators; heterojunction bipolar transistors; microstrip resonators; millimetre wave oscillators; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; varactors; voltage-controlled oscillators; 26 GHz; 40 GHz; MBE-grown layers; MMIC oscillators; SiGe; VCOs; common-emitter series feedback configuration; heterojunction bipolar transistor; high-resistivity substrate; microstrip resonators; output power; tuning range; varactors; Circuits; Conductivity; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microstrip; Silicon germanium; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499321
