Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistor

Author

Gruhle, A. ; Schüppen, A. ; König, U. ; Erbe, U. ; Schumacher, H.

Author_Institution

Daimler-Benz AG, Ulm, Germany

fYear

1995

Firstpage

725

Lastpage

728

Abstract

Monolithically integrated 26 GHz and 40 GHz VCOs have been built with SiGe heterojunction bipolar transistors (HBT). The tuning range was more than 3 GHz, the output power behind an on-chip 10 dB-attenuator reached -13 dBm. The HBTs and the varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The transistors had an f_max of about 60 GHz and were operated in common-emitter series feedback configuration. Chip sizes including the microstrip resonators were 2×2.8 mm²

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MIMIC; bipolar MMIC; feedback oscillators; heterojunction bipolar transistors; microstrip resonators; millimetre wave oscillators; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; varactors; voltage-controlled oscillators; 26 GHz; 40 GHz; MBE-grown layers; MMIC oscillators; SiGe; VCOs; common-emitter series feedback configuration; heterojunction bipolar transistor; high-resistivity substrate; microstrip resonators; output power; tuning range; varactors; Circuits; Conductivity; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microstrip; Silicon germanium; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499321

Filename

499321