DocumentCode :
1657451
Title :
Physiological Responses of Radish (Raphanus Sativus L.) to Lead Stress
Author :
He, Ling-Li ; Liu, Li-Wang ; Gong, Yi-Qin ; Hou, Xi-Lin ; Zhu, Xian-Wen ; Yang, Jin-Lan ; Wu, Bin
Author_Institution :
Nat. Key Lab. of Crop Genetics & Germplasm Enhancement, Nanjing Agric. Univ., Nanjing
fYear :
2008
Firstpage :
4602
Lastpage :
4605
Abstract :
To investigate the phytotoxicity and tolerance responses of radish (Raphanus sativus L.) to Lead (Pb), plants of two genotypes were exposed to various concentrations of Pb (0, 100, 400 and 800 mg L-1) for up to 8 days by hydroponics culture. The plant growth was inhibited under Pb stress, with the decrease of root length, fresh and dry weights. Excess Pb induced MDA contents increasing significantly and MDA in shoot was much higher than that in root, while the content of MDA in Nau-Rg05 was higher than that in Nau-Zdcb05. The antioxidant activities (SOD, POD, CAT and APX) increased in the roots at 100 mg L-1 Pb compared to control and followed by decreasing with the increasing Pb concentrations, indicating a direct correlation with Pb accumulation. Moreover, the antioxidant activities in root of Nau-Rg05 were higher than that in Nau-Zdcb05. It can be suggested that Pb induces oxidative stress in growing radish plants and the SOD, POD, CAT and APX could serve as important components of antioxidative defense mechanism against Pb stress in radish.
Keywords :
biological techniques; botany; environmental degradation; lead; molecular biophysics; toxicology; vegetation; Pb; Raphanus sativus L; antioxidative defense mechanism; hydroponics culture; lead stress; phytotoxicity; plant growth; plant weight; radish physiological response; root length; Biochemistry; Crops; Environmentally friendly manufacturing techniques; Human factors; Industrial pollution; Laboratories; Lead; Lipidomics; Soil; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bioinformatics and Biomedical Engineering, 2008. ICBBE 2008. The 2nd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1747-6
Electronic_ISBN :
978-1-4244-1748-3
Type :
conf
DOI :
10.1109/ICBBE.2008.310
Filename :
4535190
Link To Document :
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