Title :
Alternating current approach on Si nanograting FETs for pH sensitivity improvement
Author :
Honglei Wang ; Yuchen Liang ; Pengyuan Zang ; Young, Chadwin D. ; Hu, Wenfeng
Author_Institution :
Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
The pH sensing response of the alternating current (AC) on the source/drain was investigated on lithographically defined Si NGFETs which were modified with APDMES. The sensors were measured under different frequency and the sensitivity was improved (~ 2 to 8 times) in a frequency range from 100Hz to 100KHz, with the maximum of improvement around the cut-off frequency.
Keywords :
elemental semiconductors; field effect transistors; lithography; pH; silicon; APDMES; Si; alternating current approach; cut-off frequency; frequency 100 Hz to 100 kHz; lithographically-defined silicon NGFET; pH sensing response; pH sensitivity improvement; sensitivity; silicon nanograting FET; source-drain; Cutoff frequency; Field effect transistors; Logic gates; Sensitivity; Sensors; Silicon;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968123
