DocumentCode
165747
Title
Alternating current approach on Si nanograting FETs for pH sensitivity improvement
Author
Honglei Wang ; Yuchen Liang ; Pengyuan Zang ; Young, Chadwin D. ; Hu, Wenfeng
Author_Institution
Univ. of Texas at Dallas, Richardson, TX, USA
fYear
2014
fDate
18-21 Aug. 2014
Firstpage
578
Lastpage
581
Abstract
The pH sensing response of the alternating current (AC) on the source/drain was investigated on lithographically defined Si NGFETs which were modified with APDMES. The sensors were measured under different frequency and the sensitivity was improved (~ 2 to 8 times) in a frequency range from 100Hz to 100KHz, with the maximum of improvement around the cut-off frequency.
Keywords
elemental semiconductors; field effect transistors; lithography; pH; silicon; APDMES; Si; alternating current approach; cut-off frequency; frequency 100 Hz to 100 kHz; lithographically-defined silicon NGFET; pH sensing response; pH sensitivity improvement; sensitivity; silicon nanograting FET; source-drain; Cutoff frequency; Field effect transistors; Logic gates; Sensitivity; Sensors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location
Toronto, ON
Type
conf
DOI
10.1109/NANO.2014.6968123
Filename
6968123
Link To Document