Title :
SiGe base bipolar technology with 74 GHz fmax and 11 ps gate delay
Author :
Meister, T.F. ; Schäfer, H. ; Franosch, M. ; Molzer, W. ; Aufinger, K. ; Scheler, U. ; Walz, C. ; Stolz, M. ; Boguth, S. ; Böck, J.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
An epitaxial SiGe-base bipolar technology suited for very high performance mixed digital/analogue applications is presented. A key feature is the emitter/base process which is the obvious SiGe-base extension of the implanted base double-poly self-aligned emitter/base structure. The fabricated HBTs exhibit a maximum cut-off frequency fT of 61 GHz, a maximum oscillation frequency fmax of 74 GHz and a record CML gate delay time of 11 ps
Keywords :
Ge-Si alloys; bipolar digital integrated circuits; heterojunction bipolar transistors; integrated circuit technology; mixed analogue-digital integrated circuits; semiconductor materials; 11 ps; 61 GHz; 74 GHz; HBT; SiGe; SiGe base bipolar technology; emitter/base process; epitaxial SiGe-base; mixed digital/analogue applications; Boron; Capacitance; Cutoff frequency; Delay; Doping; Epitaxial growth; Germanium silicon alloys; Isolation technology; Research and development; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499324
