Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems

Author

Pruijmboom, A. ; Terpstra, D. ; Timmering, C.E. ; de Boer, W.B. ; Theunissen, M.J.J. ; Slotboom, J.W. ; Hueting, R.J.E. ; Hageraats, J. J E M

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1995

Firstpage

747

Lastpage

750

Abstract

A silicon bipolar technology is presented that incorporates a selectively epitaxially grown base in a double-polysilicon transistor. Si-bases as well as Si-SiGe-multilayer bases are applied. Both result in excellent device performance, with cut-off and maximum oscillation frequencies up to 45 GHz, and ECL-gate delays down to 13.7 ps. DC-coupled broad-band amplifiers for 15 Gbit/s optical data links have been fabricated, providing record bandwidths of 13.2 GHz. As selective epitaxial growth is performed at 700°C in a production epitaxial reactor, this technology can easily be combined with current semiconductor manufacturing technology

Keywords

MMIC amplifiers; bipolar MMIC; bipolar digital integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; optical communication equipment; semiconductor growth; silicon; vapour phase epitaxial growth; wideband amplifiers; 13.2 GHz; 13.7 to 14 ps; 15 Gbit/s; 45 GHz; 700 C; DC-coupled broadband amplifiers; ECL gate delay; Si bipolar technology; Si-SiGe; Si-SiGe multilayer bases; double-polysilicon transistor; low power wideband communication systems; optical data links; selective epitaxial growth; selective-epitaxial base technology; Bandwidth; Cutoff frequency; Delay; Epitaxial growth; Optical amplifiers; Optical recording; Production; Semiconductor optical amplifiers; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499326

Filename

499326