DocumentCode
1657561
Title
Highly sensitive Si nanowire-based gas sensors for detection of a nerve agent
Author
Kim, Yeonju ; Lee, Jun Min ; Lee, Seung Hyun ; Lee, Wooyoung
Author_Institution
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
fYear
2010
Firstpage
736
Lastpage
737
Abstract
We report the electrical detection of nerve agent gas using p-type Si-nanowire-based sensors. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire sensors. Using the fabricated Si-nanowire sensors, the detection of DMMP was successfully achieved. Our results suggest that Si-nanowire-based gas sensors can be used to detect dimethylniethylphosphonate (DMMP).
Keywords
chemical hazards; electron beam lithography; elemental semiconductors; gas sensors; nanofabrication; nanolithography; nanosensors; nanowires; organic compounds; silicon; DMMP detection; Si; chemical warfare agents; dimethylniethylphosphonate detection; electrical detection; electron-beam lithography; highly sensitive p-type silicon nanowire based gas sensor; lift-off process; nerve agent detection; size 50 nm; Gas detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424551
Filename
5424551
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