Title :
Monte Carlo simulation of electron transport in strained Si/Si1-xGex n-MOSFETs
Author :
Rashed, Mahbub ; Shih, W.K. ; Jallepalli, S. ; Kwan, T.J.T. ; Maziar, C.M.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Electron transport in the inversion layer of strained-silicon-channel n-MOSFETs is investigated using a Monte Carlo (MC) tool that takes into account the 2D nature of the electron gas. The subband structure is calculated using a bulk nonparabolic E-K relation, E(K)(1+αE(M))=γbulk(K), where α is the nonparabolicity coefficient. Single particle MC simulations are performed at room temperature by solving a 2D multi-subband BTE. The scattering mechanisms include phonon, surface roughness and alloy scattering. Agreement between calculated and experimental enhancement of effective mobility is presented
Keywords :
Ge-Si alloys; MOSFET; Monte Carlo methods; carrier mobility; elemental semiconductors; impurity scattering; inversion layers; semiconductor device models; semiconductor materials; silicon; surface topography; two-dimensional electron gas; 2D electron gas; 2D multi-subband BTE; Monte Carlo simulation; Si-SiGe; alloy scattering; bulk nonparabolic E-K relation; electron transport; inversion layer; nonparabolicity coefficient; scattering mechanisms; single particle MC simulations; strained-silicon-channel n-MOSFETs; subband structure; surface roughness; Carrier confinement; Electron mobility; Germanium alloys; Germanium silicon alloys; MOS devices; MOSFET circuits; Particle scattering; Phonons; Silicon germanium; Substrates;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499330
