• DocumentCode
    165764
  • Title

    Effect of the length of silicon nanodot/wire on band gap

  • Author

    Hassan, Walid M. I. ; Verma, A. ; Nekovei, Reza ; Khader, Mahmoud M. ; Anantram, Manjeri P.

  • Author_Institution
    Gas Process. Center, Qatar Univ., Doha, Qatar
  • fYear
    2014
  • fDate
    18-21 Aug. 2014
  • Firstpage
    373
  • Lastpage
    376
  • Abstract
    We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ideal infinitely long SNW. The H/T atomic ratio can be used to express the S/V ratio, which is approximately linearly related to band gap value.
  • Keywords
    elemental semiconductors; energy gap; nanowires; silicon; Si; atomic ratio; band gap; silicon nanodot; silicon nanowire; Atomic layer deposition; Atomic measurements; Educational institutions; Geometry; Hydrogen; Photonic band gap; Silicon; Length; Silicon nanowire; Theoretical; band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
  • Conference_Location
    Toronto, ON
  • Type

    conf

  • DOI
    10.1109/NANO.2014.6968131
  • Filename
    6968131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=165764