Title :
Tunable graphene/Si chemi-diode H2 sensor: Comparison between Pd and Pt functionalization, and effect of illumination
Author :
Uddin, Muhammad Athar ; Singh, A.K. ; Sudarshan, Tangali S. ; Chandrashekhar, Mvs ; Koley, Goutam
Author_Institution :
Dept. Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
Tunable graphene/Si heterostructure Schottky diode H2 sensor with two different metal (Pd and Pt) functionalization has been demonstrated. In reverse bias, the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially which results in more than an order of higher sensitivity of the chemi-diode sensor compared to the graphene chemiresistor sensor. Tunable sensitivity of the sensor has been achieved through graphene Fermi level modulation by varying the reverse bias magnitude. Operation in reverse bias also enabled low power consumption.
Keywords :
Fermi level; Schottky diodes; adsorption; chemical sensors; elemental semiconductors; graphene; hydrogen; palladium; platinum; silicon; C-Si-Pd; C-Si-Pt; H2; Pd functionalization; Pt functionalization; graphene Fermi level modulation; graphene chemiresistor sensor; heterojunction current; illumination effect; molecular adsorption induced Schottky barrier height; power consumption; reverse bias magnitude; tunable graphene-Si chemidiode H2 sensor; tunable graphene-Si heterostructure Schottky diode H2 sensor; Graphene; Lighting; Metals; Schottky diodes; Sensitivity; Sensors; Silicon; Graphene/Si heterostructure; H2 Sensor; Pd/Pt-functionalization; Schottky Diode Sensor; Tunable Sensitivity;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968132
