Title :
Modeling the effects of traps on the I-V characteristics of GaAs MESFETs
Author :
Fiegna, Claudio ; Filicori, Fabio ; Vannini, Giorgio ; Venturi, Franco
Author_Institution :
Istituto di Ingegneria, Ferrara Univ., Italy
Abstract :
This paper provides an investigation on the effects of deep level traps on the large-signal I-V characteristics of GaAs MESFETs by means of measurements and physics-based device simulations; results give clear indications that pulsed I-V measurements are sufficient in order to characterize large-signal AC device operation and provide a good physical basis for circuit-level large signal MESFET models
Keywords :
III-V semiconductors; Schottky gate field effect transistors; characteristics measurement; deep levels; electron traps; gallium arsenide; semiconductor device models; AC device operation; GaAs; MESFETs; circuit-level large signal MESFET models; deep level traps; large-signal I-V characteristics; physics-based device simulations; pulsed I-V measurements; semiconductor device measurements; Circuit simulation; Dispersion; FETs; Frequency measurement; Gallium arsenide; MESFETs; Pulse circuits; Pulse measurements; Shape measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499332
