Title :
Direct growth of Bismuth Telluride nanowires by On-Film Formation of Nanowires for high-efficiency thermoelectric devices
Author :
Ham, Jinhee ; Shim, Wooyoung ; Kim, Do Hyun ; Lee, Seunghyun ; Roh, Jongwook ; Sohn, Sung Woo ; Oh, Kyu Hwan ; Voorhees, Peter W. ; Lee, Wooyoung
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
We report a novel stress-induced method to grow single crystalline Bi2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi2Te3 nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.
Keywords :
annealing; bismuth alloys; grain boundaries; nanowires; tellurium alloys; thermal expansion; thermoelectric devices; thermoelectricity; thin films; Bi2Te3; bismuth telluride nanowires; grain boundaries; high-efficiency thermoelectric devices; on-film formation; polycrystalline film; single crystalline nanowires; stress relaxation; stress-induced mass flow; stress-induced method; temperature 350 degC; thermal annealing; thermal expansion; thermally oxidized silicon substrate; wire growth; Annealing; Bismuth; Crystallization; Mechanical factors; Nanowires; Semiconductor films; Tellurium; Thermal expansion; Thermal stresses; Thermoelectric devices;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424556
