Direct growth of Bismuth Telluride nanowires by On-Film Formation of Nanowires for high-efficiency thermoelectric devices

Author

Ham, Jinhee ; Shim, Wooyoung ; Kim, Do Hyun ; Lee, Seunghyun ; Roh, Jongwook ; Sohn, Sung Woo ; Oh, Kyu Hwan ; Voorhees, Peter W. ; Lee, Wooyoung

Author_Institution

Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea

fYear

2010

Firstpage

105

Lastpage

106

Abstract

We report a novel stress-induced method to grow single crystalline Bi₂Te₃ nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi₂Te₃ nanowires were found to grow on as-sputter ed BiTe films after thermal annealing at 350Â°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

Keywords

annealing; bismuth alloys; grain boundaries; nanowires; tellurium alloys; thermal expansion; thermoelectric devices; thermoelectricity; thin films; Bi₂Te₃; bismuth telluride nanowires; grain boundaries; high-efficiency thermoelectric devices; on-film formation; polycrystalline film; single crystalline nanowires; stress relaxation; stress-induced mass flow; stress-induced method; temperature 350 degC; thermal annealing; thermal expansion; thermally oxidized silicon substrate; wire growth; Annealing; Bismuth; Crystallization; Mechanical factors; Nanowires; Semiconductor films; Tellurium; Thermal expansion; Thermal stresses; Thermoelectric devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424556

Filename

5424556